Researchers at the College of Engineering of the University of Tehran have improved the performance of next-generation transistors

According to the Public Relations Department of the College of Engineering, researchers from the School of Electrical and Computer Engineering conducted a new study examining the two-dimensional material WSi₂N₄ for use in next-generation transistors. They found that this material can play an effective role in the development of low-power, high-speed electronic devices.

In this study, the performance of field effect transistors (FET) and tunnel field effect transistors (TFET) based on WSi₂N₄ monolayer was compared using advanced simulations. The results showed that NTFET transistors have a very favorable performance in terms of energy efficiency; such that their subthreshold slope is reduced to 18.5 mV / decade, which will lead to a reduction in power consumption. Also, NFET transistors recorded the highest on-state current of 494 μA/μm and very low time delay, which indicates their favorable performance in future electronic applications.

This achievement may facilitate the development of a new generation of electronic circuits characterized by reduced energy consumption, enhanced operational speed, and improved overall efficiency, and may further contribute to the design and advancement of sophisticated electronic systems and low-power technologies.

This research was conducted by Hamidreza Ghanbari-Khorram, a graduate of the University of Tehran; Dr. Samad Sheikhaei, a faculty member in the School of Electrical and Computer Engineering at the University of Tehran; and Dr. Shoaib Babaei-Toski and Dr. Alireza Kokabi, who are faculty members at Hamedan University of Technology. The results have been published in the Journal of Physics and Chemistry of Solids.

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https://www.sciencedirect.com/science/article/abs/pii/S0022369725004020