Researchers at the College of Engineering of the University of Tehran have improved the performance of next-generation transistors
Researchers from the School of Electrical and Computer Engineering have presented a solution to improve the energy efficiency and performance of electronic devices in a study investigating WSi₂N₄ monolayers in field-effect transistors (FETs) and tunnel field-effect transistors (TFETs). The results have been published in the Journal of Physics and Chemistry of Solids.
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